KBU6A(2008) Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
KBU6A Datasheet PDF : 4 Pages
| |||
KBU6A thru KBU6M
Vishay General Semiconductor
100
10
TJ = 25 °C
Pulse Width = 300 µs
1 % Duty Cycle
1
1000
100
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
0.1
0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
Instantaneous Forward Voltage (V)
Figure 3. Typical Instantaneous Forward Characteristics Per Diode
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance Per Diode
100
10
TJ = 100 °C
1
0.1
TJ = 25 °C
0.01
0
20
40
60
80
100
Percent of Rated Peak Reverse Voltage (%)
Figure 4. Typical Reverse Leakage Characteristics Per Diode
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
Case Style KBU
0.160 (4.1)
0.140 (3.6)
0.935 (23.7)
0.895 (22.7)
0.760
(19.3)
MAX.
0.700
(17.8)
0.660
(16.8)
0.075 (1.9) R TYP. (2 Places)
0.185 (4.7)
0.165 (4.2)
45°
0.085 (2.2)
0.065 (1.7)
0.455 (11.3)
0.405 (10.3)
1.0
(25.4)
MIN.
0.220 (5.6)
0.180 (4.6)
0.205 (5.2)
0.185 (4.7)
0.052 (1.3)
0.048 (1.2)
DIA.
0.240 (6.09)
0.200 (5.08)
0.280 (7.1)
0.260 (6.6)
Document Number: 88657 For technical questions within your region, please contact one of the following:
Revision: 15-Apr-08
PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com
www.vishay.com
3
Share Link: 