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Fabricante

BC847_11

Surface Mount General Purpose Si-Epi-Planar Transistors

Diotec Semiconductor Germany  

BC846 ... BC850

Characteristics (Tj = 25°C)

Base-Emitter-voltage – Basis-Emitter-Spannung 2)

VCE = 5 V, IC = 2 mA

VBE

VCE = 5 V, IC = 10 mA

VBE

Collector-Base cutoff current – Kollektor-Basis-Reststrom

VCB = 30 V, (E open)

ICBO

VCE = 30 V, Tj = 125°C, (E open)

ICBO

Emitter-Base cutoff current

VEB = 5 V, (C open)

IEBO

Gain-Bandwidth Product – Transitfrequenz

VCE = 5 V, IC = 10 mA, f = 100 MHz

fT

Collector-Base Capacitance – Kollektor-Basis-Kapazität

VCB = 10 V, IE =ie = 0, f = 1 MHz

CCBO

Emitter-Base Capacitance – Emitter-Basis-Kapazität

VEB = 0.5 V, IC = ic = 0, f = 1 MHz

CEBO

Thermal resistance junction to ambient air

Wärmewiderstand Sperrschicht – umgebende Luft

RthA

Recommended complementary PNP transistors

Empfohlene komplementäre PNP-Transistoren

Marking of available current gain groups

Stempelung der lieferbaren

Stromverstärkungsgruppen

BC846A = 1A

BC846B = 1B

Kennwerte (Tj = 25°C)

Min.

Typ.

Max.

580 mV 660 mV 700 mV

–

–

720 mV

–

–

15 nA

–

–

5 µA

–

–

100 nA

–

300 MHz

–

–

3.5 pF

6 pF

–

9 pF

–

< 420 K/W 1)

BC856 ... BC860

BC847A = 1E

BC847B = 1F

BC847C = 1G

BC848A = 1E

BC848B = 1F

BC848C = 1G

BC850B = 1F BC849B = 1F

BC850C = 1G BC849C = 1G

2 Tested with pulses tp = 300 µs, duty cycle ≤ 2% – Gemessen mit Impulsen tp = 300 µs, Schaltverhältnis ≤ 2%

1 Mounted on P.C. board with 3 mm2 copper pad at each terminal

Montage auf Leiterplatte mit 3 mm2 Kupferbelag (Lötpad) an jedem Anschluss

2

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