RB200 Ver la hoja de datos (PDF) - PANJIT INTERNATIONAL
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RB200 Datasheet PDF : 2 Pages
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RB200 SERIES
2.0 A SILICON BRIDGE RECTIFIERS
VOLTAGE 50 to 1000 Volts CURRENT 2.0 Amperes
FEATURES
• Plastic material used carries Underwriters Laboratory recognition.
• High case dielectric strength.
• Typical IR LESS Than 1uA.
• Exceeds environmental standards of MIL-STD-19500
• Ideal for printed circuit board.
• High temperature soldering guaranteed: 265OC/10 seconds/ .375”
(9.5 mm) lead length/5 Ibs. (2.3kg) tension
• Component are in compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: Reliable low cost construction utilizing molded plastic technique
• Terminals: Leads solderable per MIL-STD-750, Method 2026
• Mounting Position: Any
• Weight:1.4 grams.
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25°C ambient temperature unless otherwise specified. Resistive or inductive load, Single phase, half wave, 60Hz.
For Capacitive load derate current by 20%.
PARAMETER
Maximum Recurrent Peak Reverse Voltage
Maximum RMS Bridge Input Voltage
Maximum DC Blocking Voltage
Maximum Average Forward Rectified Output Current .375"
(9.5mm ) Lead Length at TA=25OC
Peak Forward Surge Current : 8.3ms single half sine-wave
superimposed on rated load (JEDEC method)
I2t Rating for fusing ( t<8.35ms)
Maximum Forward Voltage Drop per Element at 1.0A
Maximum DC Reverse Current TA=25 OC
at Rated DC Blocking Voltage T A=100 OC
Typical Junction capacitance per bridge element (Note 1)
Operating Junction Temperature Range
Storage Temperature Range
SYMBOL RB200 RB201 RB202 RB204 RB206 RB208 RB2010 UNITS
VRRM
50
100
200
400
600
800
1000
V
VRMS
35
70
140
280
420
560
700
V
VDC
50
100
200
400
600
800
1000
V
IF(AV)
2.0
A
IFSM
50
A
I 2t
15
A2s
VF
1.0
V
IR
10
1
µA
CJ
30
pF
TJ
-55 to + 125
OC
TSTG
-55 to + 150
OC
NOTES:
1. Measured at 1.0 MHz and applied reverse voltage of 4.0 Volts.
STAD-JAN.11.2007
PAGE . 1
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