MJE4353 Ver la hoja de datos (PDF) - Inchange Semiconductor

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componentes Descripción

Fabricante

MJE4353

Silicon PNP Power Transistors

Inchange Semiconductor 

INCHANGE Semiconductor

isc Silicon PNP Power Transistors

isc Product Specification

MJE4350/4351/4352/4353

DESCRIPTION

·Collector-Emitter Sustaining Voltage-

: VCEO(SUS) = -100V(Min)- MJE4350

= -120V(Min)- MJE4351

= -140V(Min)- MJE4352

= -160V(Min)- MJE4353

·Low Saturation Voltage

·Complement to Type MJE4340/4341/4342/4343

APPLICATIONS

·Designed for use in high power audio amplifier applications

and high voltage switching regulator circuits.

ABSOLUTE MAXIMUM RATINGS(Ta=25℃)

SYMBOL

PARAMETER

VALUE

UNIT

MJE4350

-100

VCBO

Collector-Base

Voltage

MJE4351

-120

V

MJE4352

-140

MJE4353

-160

MJE4350

-100

VCEO

Collector-Emitter

Voltage

MJE4351

-120

V

MJE4352

-140

MJE4353

-160

VEBO

Emitter-Base Voltage

-7

V

IC

Collector Current-Continuous

-16

A

ICM

Collector Current-Peak

-20

A

IBB

Base Current-Continuous

Collector Power Dissipation

PC

@ TC=25℃

TJ

Junction Temperature

Tstg

Storage Temperature Range

-5

A

125

W

150

℃

-65~150 ℃

THERMAL CHARACTERISTICS

SYMBOL

PARAMETER

Rth j-c Thermal Resistance, Junction to Case

MAX

1.0

UNIT

℃/W

isc Website：www.iscsemi.cn

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