TDA75610DLVPD Ver la hoja de datos (PDF) - STMicroelectronics
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TDA75610DLVPD
STMicroelectronics
TDA75610DLVPD Datasheet PDF : 37 Pages
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Electrical specifications
TDA75610DLVPD
3.3
Electrical characteristics
Refer to the test circuit, VS = 14.4 V; RL = 4 Ω; f = 1 kHz; GV = 26 dB; Tamb = 25 °C; unless
otherwise specified.
Tested at Tamb = 25 °C and Thot = 105 °C; functionality guaranteed for Tj = -40 °C to 150 °C.
Symbol
Table 5. Electrical characteristics
Parameter
Test condition
Min. Typ. Max. Unit
General characteristics
VS Supply voltage range
Id
Total quiescent drain current
RIN Input impedance (differential)
VAM Min. supply mute threshold
RL = 4 Ω
RL = 2 Ω
-
-
IB1(D7) = 1
IB1(D7) = 0 (default)
6
-
18
V
6
-
16
-
160 250 mA
90
115 140 kΩ
7
-
8
V
5
-
6
VOS
Vdth
ISB
SVR
Offset voltage
Dump threshold
Standby current
Supply voltage rejection
TON
Turn on timing (Mute play
transition)
Mute & play
-80
-
80
mV
-
18.5
-
20.5 V
Vstandby = 0
-
1
f = 100 Hz to 10 kHz; Vr = 1 Vpk;
Rg = 600 Ω
60
70
5
µA
-
dB
D2/D1 (IB1) 0 to 1
-
25
50
ms
TOFF
Turn off timing (Play mute
transition)
D2/D1 (IB1) 1 to 0
-
25
50
ms
THWARN1
Average junction temperature for
TH warning 1
DB1 (D7) = 1
-
160
-
THWARN2
Average junction temperature for
TH warning 2
DB4 (D7) = 1
-
145
-
°C
THWARN3
Average junction temperature for
TH warning 3
DB4 (D6) = 1
-
125
-
Audio performances
PO Output power
Max. power(1) Vs = 15.2 V, RL = 4
-
45
-
W
THD = 10 %, RL = 4 Ω
THD = 1 %, RL = 4 Ω
23
25
-
22
-
W
W
RL = 2 Ω; THD 10 %
44
W
RL = 2 Ω; THD 1 %
-
33
-
W
RL = 2 Ω; Max. power(1) Vs = 14.4 V
64
W
Max power@ Vs = 6 V, RL = 4
-
5
-
W
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DocID024175 Rev 8
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