SS8050 Ver la hoja de datos (PDF) - Bruckewell Technology LTD
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SS8050 Datasheet PDF : 4 Pages
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SS8050
TRANSISTOR (NPN)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
MAXIMUM RATING @ Ta=25°C unless otherwise noted
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
25
V
VEBO
Emitter-Base Voltage
5
V
IC
Collector Current
1.5
A
PC
Collector Dissipation
0.3
W
Tj
Junction Temperature
150
°C
Tstg
Storage Temperature
-55 to +150
°C
ELECTRICAL CHARACTERISTICS @ Ta=25°C unless otherwise specified
Symbol Parameter
Test Conditions
V(BR)CBO Collector-base breakdown voltage
IC = 100μA , IE = 0
V(BR)CEO Collector-emitter breakdown voltage IC = 0.1mA , IB = 0
V(BR)EBO Emitter-base breakdown voltage
IE = 100μA , IC = 0
ICBO
Collector cut-off current
VCB = 40 V , IE = 0
ICEO
Collector cut-off current
VCB = 20 V , IE = 0
IEBO
Emitter cut-off current
VEB = 5 V , IC = 0
hFE(1)
hFE(2)
DC current gain
VCE = 1 V , IC = 100 mA
VCE = 1 V , IC = 800 mA
VCE(sat)
Collector-emitter saturation voltage IC = 800mA , IB = 80mA
VBE(sat)
Base-emitter saturation voltage
IC = 800mA , IB = 80mA
fT
Transition frequency
VCE=10V, IC= 50mA, f=30MHz
MIN TYP MAX UNIT
40
V
25
V
5
V
0.1 μA
0.1 μA
0.1 μA
120
400
40
0.5
V
1.2
V
100
MHz
CLASSIFICATION OF hFE(1)
Rank
L
Range
120-200
H
200-350
J
300-400
Publication Order Number: [SS8050]
© Bruckewell Technology Corporation Rev. A -2014
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