BCX52 Ver la hoja de datos (PDF) - Galaxy Semi-Conductor

Número de pieza

componentes Descripción

Fabricante

BCX52

PNP Medium power transistors

Galaxy Semi-Conductor 

Production specification

PNP Medium power transistors

BCX51/BCX52/BCX53

Parameter

Symbol Test conditions

MIN TYP MAX UNIT

IC=-100μA IE=0 BCX51 -45

Collector-base breakdown voltage V(BR)CBO

BCX52 -60

V

BCX53 -100

Collector-emitter breakdown

IC=-10mA IB=0 BCX51 -45

voltage

V(BR)CEO

BCX52 -60

V

BCX53 -80

Emitter-base breakdown voltage

V(BR)EBO IE=-10μA IC=0

-5

μV

Collector cut-off current

ICBO

VCB=-30V IE=0

-0.1 μA

VCE=-2V IC=-5mA

25

DC current gain

VCE=-2V IC=-150mA

40

250

BCX51…53

hFE

VCE=-2V IC=-150mA -10 63

160

-16 100

250

VCE=-2V IC=-500mA

25

Collector-emitter saturation voltage VCE(sat) IC=-500mA IB=-50mA

-0.5 V

Base-emitter voltage

Transition frequency

VBE

IC=-500mA ,VCE=-2V

fT

VCE=-10 IC=-50mA,

f=20MH

-1 V

125

MHz

E020

Rev.A

www.gmicroelec.com

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