TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
TYPICAL CHARACTERISTICS
TYPICAL DC CURRENT GAIN
vs
COLLECTOR CURRENT
100
VCE = 5 V
TCP765AE
TC = 125°C
TC = 25°C
TC = -65°C
10
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AF
5·0
IC = 1 A
IC = 2 A
IC = 5 A
4·0
IC = 10 A
TC = 25°C
3·0
2·0
1·0
1·0
0
0·1
1·0
10
0·01
0·1
1·0
10
IC - Collector Current - A
IB - Base Current - A
Figure 3.
Figure 4.
COLLECTOR-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AJ
5·0
IC = 1 A
IC = 2 A
IC = 5 A
4·0
IC = 10 A
TC = 100°C
3·0
BASE-EMITTER SATURATION VOLTAGE
vs
BASE CURRENT
TCP765AG
1·6
1·4
1·2
2·0
1·0
0
0·01
0·1
1·0
IB - Base Current - A
Figure 5.
1·0
0·8
IC = 10 A
IC = 5 A
IC = 2 A
IC = 1 A
0·6
10
0
0·5
1·0
1·5
2·0
IB - Base Current - A
Figure 6.
PRODUCT INFORMATION
4