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TIPL765A Datasheet PDF : 7 Pages
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TIPL765, TIPL765A
NPN SILICON POWER TRANSISTORS
AUGUST 1978 - REVISED MARCH 1997
electrical characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS
MIN TYP MAX
Collector-emitter
TIPL765
400
VCEO(sus) sustaining voltage
IC = 100 mA L = 25 mH
(see Note 2)
TIPL765A
450
VCE = 850 V VBE = 0
TIPL765
50
Collector-emitter
ICES cut-off current
VCE = 1000 V
VCE = 850 V
VBE = 0
VBE = 0
TC = 100°C
TIPL765A
TIPL765
50
200
VCE = 1000 V VBE = 0
TC = 100°C
TIPL765A
200
ICEO
Collector cut-off
current
VCE = 400 V
VCE = 450 V
IB = 0
IB = 0
TIPL765
50
TIPL765A
50
Emitter cut-off
IEBO
current
VEB = 10 V IC = 0
1
Forward current
hFE
transfer ratio
VCE = 5 V IC = 0.5 A
(see Notes 3 and 4)
15
60
Collector-emitter
VCE(sat) saturation voltage
Base-emitter
VBE(sat) saturation voltage
Current gain
ft
bandwidth product
IB = 0.4 A
IB =
1A
IB =
2A
IB =
2A
IB = 0.4 A
IB =
1A
IB =
2A
IB =
2A
VCE = 10 V
IC = 2 A
IC = 5 A
IC = 10 A
IC = 10 A
IC = 2 A
IC = 5 A
IC = 10 A
IC = 10 A
IC = 0.5 A
(see Notes 3 and 4)
TC = 100°C
(see Notes 3 and 4)
TC = 100°C
f = 1 MHz
0.5
1.0
2.5
5.0
1.1
1.3
1.7
1.6
8
Cob Output capacitance VCB = 20 V IE = 0
f = 0.1 MHz
150
NOTES: 2. Inductive loop switching measurement.
3. These parameters must be measured using pulse techniques, tp = 300 µs, duty cycle ≤ 2%.
4. These parameters must be measured using voltage-sensing contacts, separate from the current carrying contacts.
UNIT
V
µA
µA
mA
V
V
MHz
pF
thermal characteristics
RθJC
PARAMETER
Junction to case thermal resistance
MIN TYP MAX UNIT
1 °C/W
inductive-load-switching characteristics at 25°C case temperature (unless otherwise noted)
PARAMETER
TEST CONDITIONS †
MIN
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
IC = 10 A
VBE(off) = -5 V
txo
Cross over time
tsv
Voltage storage time
trv
Voltage rise time
tfi
Current fall time
tti
Current tail time
IC = 10 A
VBE(off) = -5 V
txo
Cross over time
IB(on) = 2 A
IB(on) = 2 A
TC = 100°C
(see Figures 1 and 2)
(see Figures 1 and 2)
† Voltage and current values shown are nominal; exact values vary slightly with transistor parameters.
TYP MAX
2
300
200
50
400
3.5
400
300
80
500
UNIT
µs
ns
ns
ns
ns
µs
ns
ns
ns
ns
PRODUCT INFORMATION
2
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