DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

2SC4116-Y Ver la hoja de datos (PDF) - Toshiba

Número de pieza
componentes Descripción
Fabricante
2SC4116-Y Datasheet PDF : 4 Pages
1 2 3 4
2SC4116
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process)
2SC4116
Audio Frequency General Purpose Amplifier Applications
High voltage and high current: VCEO = 50 V, IC = 150 mA (max)
Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.)
High hFE: hFE = 70 to 700
Low noise: NF = 1dB (typ.), 10dB (max)
Complementary to 2SA1586
Small package
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
50
V
Emitter-base voltage
VEBO
5
V
Collector current
IC
150
mA
Base current
IB
30
mA
Collector power dissipation
PC
100
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
55 to 125
°C
JEDEC
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
JEITA
SC-70
temperature, etc.) may cause this product to decrease in the
TOSHIBA
2-2E1A
reliability significantly even if the operating conditions (i.e. operating
temperature/current/voltage, etc.) are within the absolute maximum
Weight: 0.006 g (typ.)
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
(Note)
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Noise figure
Symbol
ICBO
IEBO
hFE
VCE (sat)
fT
Cob
NF
Test Condition
VCB = 60 V, IE = 0
VEB = 5 V, IC = 0
VCE = 6 V, IC = 2 mA
IC = 100 mA, IB = 10 mA
VCE = 10 V, IC = 1 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 0.1 mA, f = 1 kHz,
Rg = 10 kΩ,
Min Typ. Max
0.1
0.1
70
700
0.1 0.25
80
2.0
3.5
1.0
10
Note: hFE classification O (O): 70 to 140, Y (Y): 120 to 240, GR (G): 200 to 400, BL (L): 350 to 700
( ) marking symbol
Marking
Unit
μA
μA
V
MHz
pF
dB
Start of commercial production
1987-01
1
2014-03-01

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]