2N2920 Ver la hoja de datos (PDF) - New Jersey Semiconductor
Número de pieza
componentes Descripción
Fabricante
2N2920 Datasheet PDF : 2 Pages
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ELECTRICAL CHARACTERISTICS (Tamb = 25°C unless otherwise stated)
Parameter
Test Conditions 1
Min.
Typ.
Max. Unit
INDIVIDUAL TRANSISTOR CHARACTERISTICS
V(BR)CBO Collector - Base Breakdown Voltage lc=10nA IE = O
60
V(BR)CEO* Collector - Emitter Breakdown Voltage lc=10mA IB = 0
60
V
V(BR)EBO Emitter - Base Breakdown Voltage
!E=10uA
lc = 0
6
ICBO
Collector Cut-off Current
VCB = 45V
IE = O
TA= 150°C
2
nA
10
HA
'CEO
Collector Cut-off Current
IEB0
Emitter Cut-off Current
VCE = 5V
VEB=5V
IB = 0
lc = 0
2
nA
2
VCE = 5V
lc = 10uA
150
600
hFE
DC Current Gain
TA = -55°C
40
—
VCE = 5V
lc = 100uA
225
VCE = 5V
lc = 1mA
300
VBE
VcE(sat)
Base - Emitter Voltage
VCE = 5V
Collector - Emitter Saturation Voltage !B=100uA
lc = 100uA
lc = 1mA
0.70
V
0.35
hib
Small Signal Common - Base
VCB = 5V lc = 1mA
25
Input Impedance
f = 1 kHz
32 »
hob
Small Signal Common - Base
Output Admittance
VCB = 5V lc = 1mA
f=1kHz
1 umho
|hfe|
Small Signal Common - Base
VCE = 5V ic = 500uA
3
—
Current Gain
f = 20MHz
Cobo
Common - Base Open Circuit
Output Capacitance
VCB = 5V IE = 0
f = 140kHz to 1 MHz
6
PF
* Pulse Test: tD = 300us , 8 < 1%.
Parameter
Test Conditions
Min. Typ. Max. Unit
TRANSISTOR MATCHING CHARACTERISTICS
hFEi
Static Forward Current Gain
VCE = 5V
lc = 100uA
0.9
hFE2
Balance Ratio
See Note 2.
1
—
VCE = 5V
|VBEi - VBE2| Base - Emitter Voltage Differential
VCE = 5V
lc = 100uA
lc = 10uAto1mA
3
mV
5
|A(VBE1-VBE2)ATA|
Base - Emitter Voltage Differential
Change With Temperature
VCE = 5V
TA1 = 25°C
VCE = 5V
TA1=25°C
lc = 100uA
TA2 = -55°C
lc-100uA
TA2 = 125°C
0.8
mV
1
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