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BC847W Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza
componentes Descripción
Fabricante
BC847W
Infineon
Infineon Technologies Infineon
BC847W Datasheet PDF : 8 Pages
1 2 3 4 5 6 7 8
BC846W...BC850W
Electrical Characteristics at TA = 25°C, unless otherwise specified.
Parameter
Symbol
Values
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
V(BR)CES
IC = 10 µA, VBE = 0
BC846W
80
-
-
BC847/850W
50
-
-
BC848/849W
30
-
-
Unit
V
Emitter-base breakdown voltage
V(BR)EBO
IE = 1 µA, IC = 0
BC846/847W
6
-
-
BC848-850W
5
-
-
Collector cutoff current
VCB = 30 V, IE = 0
Collector cutoff current
VCB = 30 V, IE = 0 , TA = 150 °C
DC current gain 1)
IC = 10 µA, VCE = 5 V
ICBO
ICBO
hFE
hFE-group A
hFE-group B
hFE-group C
-
-
15 nA
-
-
5 µA
-
-
140
-
-
250
-
-
480
-
DC current gain 1)
IC = 2 mA, VCE = 5 V
hFE
hFE-group A
hFE-group B
hFE-group C
Collector-emitter saturation voltage1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VCEsat
110 180 220
200 290 450
420 520 800
mV
-
90 250
-
200 600
Base-emitter saturation voltage 1)
IC = 10 mA, IB = 0.5 mA
IC = 100 mA, IB = 5 mA
VBEsat
-
700
-
-
900
-
Base-emitter voltage 1)
IC = 2 mA, VCE = 5 V
IC = 10 mA, VCE = 5 V
VBE(ON)
580 660 700
-
-
770
1) Pulse test: t =300µs, D = 2%
3
Dec-11-2001

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