AT-42010 Ver la hoja de datos (PDF) - Avago Technologies

Número de pieza

componentes Descripción

Fabricante

AT-42010

Up to 6 GHz Medium Power Silicon Bipolar Transistor

Avago Technologies 

AT-42010 Absolute Maximum Ratings[1]

Symbol

Parameter

Units

Absolute

Maximum

VEBO

Emitter-Base Voltage

V

1.5

VCBO

Collector-Base Voltage

V 20

VCEO

Collector-Emitter Voltage

V

12

IC

Collector Current

mA

80

PT

Power Dissipation [2,3]

mW

600

Tj

Junction Temperature

°C 200

TSTG

Storage Temperature

°C

-65 to 200

Thermal Resistance [2,4]:

θjc = 150°C/W

Notes:

1. Permanent damage may occur if any of

these limits are exceeded.

2. Tcase = 25°C.

3. Derate at 6.7 mW/°C for Tc > 110°C.

4. The small spot size of this technique results

in a higher, though more accurate determi-

nation of θjc than do alternate methods.

See MEASUREMENTS section “Thermal Re-

sistance” for more information.

Electrical Specifications, TA = 25°C

Symbol

Parameters and Test Conditions[1]

Units

Min.

Typ.

Max.

|S21E| 2

Insertion Power Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

dB

f = 4.0 GHz

10.5

11.5

5.5

P1 dB

Power Output @ 1 dB Gain Compression

VCE = 8 V, IC = 35 mA

G1 dB

1 dB Compressed Gain; VCE = 8 V, IC = 35 mA

f = 2.0 GHz

dBm 21.0

f= 4.0 GHz 20.5

f = 2.0 GHz

dB

14.0

f = 4.0 GHz

9.5

NFO

Optimum Noise Figure: VCE = 8 V, IC = 10 mA

f = 2.0 GHz

dB

1.9

f = 4.0 GHz

3.0

GA

Gain @ NFO; VCE = 8 V, IC = 10 mA

f = 2.0 GHz

dB

13.5

f = 4.0 GHz

10.0

fT

Gain Bandwidth Product: VCE = 8 V, IC = 35 mA

GHz

8.0

hFE

Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA

—

30

150 270

ICBO

Collector Cutoff Current; VCB = 8 V

µA

0.2

IEBO

Emitter Cutoff Current; VEB = 1 V

µA 2.0

CCB

Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz

pF

0.28

Notes:

1. For this test, the emitter is grounded.



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