PBSS5220V Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBSS5220V Datasheet PDF : 13 Pages
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NXP Semiconductors
8. Test information
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
−IB
90 %
10 %
−IC
90 %
−IBon (100 %)
input pulse
(idealized waveform)
− I Boff
output pulse
(idealized waveform)
−IC (100 %)
10 %
td
tr
t on
Fig 11. BISS transistor switching time definition
ts
t off
t
tf
006aaa266
VBB
VCC
(probe)
oscilloscope
450 Ω
VI
RB
R2
R1
RC
Vo (probe)
oscilloscope
450 Ω
DUT
mgd624
IC = −1 A; IBon = −50 mA; IBoff = 50 mA; R1 = open; R2 = 45 Ω; RB = 145 Ω; RC = 10 Ω
Fig 12. Test circuit for switching times
PBSS5220V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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