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PBSS5220V Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
1000
hFE
800
(1)
600
(2)
400
(3)
200
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−1.0
VBE
(V)
−0.8
−0.6
−0.4
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(1)
(2)
(3)
0
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −2 V
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 3. DC current gain as a function of collector
current; typical values
−1
VCEsat
(V)
−10−1
−10−2
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(1)
(2)
(3)
−0.2
−10−1
−1
−10
−102
−103
−104
IC (mA)
VCE = −5 V
(1) Tamb = −55 °C
(2) Tamb = 25 °C
(3) Tamb = 100 °C
Fig 4. Base-emitter voltage as a function of collector
current; typical values
−1
VCEsat
(V)
−10−1
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(1)
(2)
−10−2
(3)
−10−3
−10−1
−1
−10
−102
−103
−104
IC (mA)
IC/IB = 20
(1) Tamb = 100 °C
(2) Tamb = 25 °C
(3) Tamb = −55 °C
Fig 5. Collector-emitter saturation voltage as a
function of collector current; typical values
−10−3
−10−1
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C
(1) IC/IB = 100
(2) IC/IB = 50
(3) IC/IB = 10
Fig 6. Collector-emitter saturation voltage as a
function of collector current; typical values
PBSS5220V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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