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PBSS5220V Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
7. Characteristics
Table 7. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
ICBO
ICES
collector-base cut-off
current
collector-emitter cut-off
current
VCB = −20 V; IE = 0 A
VCB = −20 V; IE = 0 A;
Tj = 150 °C
VCE = −20 V; VBE = 0 V
IEBO
emitter-base cut-off
VEB = −5 V; IC = 0 A
current
hFE
DC current gain
VCEsat collector-emitter
saturation voltage
RCEsat collector-emitter
saturation resistance
VCE = −2 V; IC = −1 mA
VCE = −2 V; IC = −100 mA
VCE = −2 V; IC = −500 mA
VCE = −2 V; IC = −1 A
VCE = −2 V; IC = −2 A
IC = −100 mA; IB = −1 mA
IC = −500 mA; IB = −50 mA
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
IC = −2 A; IB = −100 mA
IC = −2 A; IB = −200 mA
IC = −1 A; IB = −100 mA
VBEsat
VBEon
base-emitter saturation
voltage
base-emitter turn-on
voltage
IC = −1 A; IB = −50 mA
IC = −1 A; IB = −100 mA
VCE = −5 V; IC = −1 A
td
delay time
tr
rise time
IC = −1 A; IBon = −50 mA;
IBoff = 50 mA
ton
turn-on time
ts
storage time
tf
fall time
toff
turn-off time
fT
transition frequency VCE = −10 V; IC = −50 mA;
f = 100 MHz
Cc
collector capacitance VCB = −10 V; IE = ie = 0 A;
f = 1 MHz
Min
-
-
-
-
220
220
[1] 220
[1] 155
[1] 60
-
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
[1] -
-
-
-
-
-
-
-
150
-
[1] Pulse test: tp ≤ 300 μs; δ ≤ 0.02.
Typ Max Unit
-
−0.1 μA
-
−50 μA
-
−0.1 μA
-
−0.1 μA
495 -
440 -
310 -
220 -
120 -
−50 −80 mV
−75 −115 mV
−155 −220 mV
−140 −210 mV
−305 −455 mV
−265 −390 mV
140 210 mΩ
−0.95 −1.1 V
−1 −1.1 V
−0.8 −1 V
8
-
34 -
42 -
140 -
45 -
185 -
185 -
ns
ns
ns
ns
ns
ns
MHz
15 20 pF
PBSS5220V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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