PBSS5220V Ver la hoja de datos (PDF) - NXP Semiconductors.
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PBSS5220V Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
6. Thermal characteristics
Table 6.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
thermal resistance from
junction to ambient
Rth(j-sp)
thermal resistance from
junction to solder point
Conditions
Min Typ Max Unit
in free air
[1][4] -
-
410 K/W
[2][4] -
-
250 K/W
[3][4] -
-
140 K/W
-
-
80
K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.
[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.
[4] Reflow soldering is the only recommended soldering method.
103
Zth(j-a)
(K/W)
102
duty cycle =
1
0.75
0.5
0.33
0.2
0.1
0.05
10 0.02
0.01
10
006aaa425
10−1
10−5
10−4
10−3
10−2
10−1
1
10
102
103
tp (s)
FR4 PCB, standard footprint
Fig 2. Transient thermal impedance from junction to ambient as a function of pulse time; typical values
PBSS5220V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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