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PBSS5220V

20 V, 2 A PNP low VCEsat (BISS) transistor

NXP Semiconductors. 

NXP Semiconductors

PBSS5220V

20 V, 2 A PNP low VCEsat (BISS) transistor

Table 5. Limiting values …continued

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter

Conditions

Min

Tamb

ambient temperature

−65

Tstg

storage temperature

−65

Max Unit

+150 °C

+150 °C

[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.

[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm2.

[3] Device mounted on a ceramic PCB, Al2O3, standard footprint.

[4] Reflow soldering is the only recommended soldering method.

1.2

Ptot

(W)

(1)

0.8

(2)

0.4

(3)

006aaa424

0

0

40

80

(1) Ceramic PCB, Al2O3, standard footprint

(2) FR4 PCB, mounting pad for collector 1 cm2

(3) FR4 PCB, standard footprint

Fig 1. Power derating curves

120

160

Tamb (°C)

PBSS5220V_3

Product data sheet

Rev. 03 — 14 December 2009

© NXP B.V. 2009. All rights reserved.

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