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PBSS5220V Datasheet PDF : 13 Pages
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NXP Semiconductors
PBSS5220V
20 V, 2 A PNP low VCEsat (BISS) transistor
2. Pinning information
Table 2.
Pin
1
2
3
4
5
6
Pinning
Description
collector
collector
base
emitter
collector
collector
Simplified outline Symbol
654
123
1, 2, 5, 6
3
4
sym030
3. Ordering information
Table 3. Ordering information
Type number Package
Name
Description
PBSS5220V
-
plastic surface mounted package; 6 leads
Version
SOT666
4. Marking
Table 4. Marking codes
Type number
PBSS5220V
Marking code
N7
5. Limiting values
Table 5. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IB
IBM
Ptot
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
open emitter
open base
open collector
tp ≤ 300 μs
tp ≤ 300 μs
Tamb ≤ 25 °C
-
-
-
-
-
-
-
[1][4] -
[2][4] -
[3][4] -
Tj
junction temperature
-
Max Unit
−20
V
−20
V
−5
V
−2
A
−4
A
−0.3 A
−0.6 A
0.3
W
0.5
W
0.9
W
150
°C
PBSS5220V_3
Product data sheet
Rev. 03 — 14 December 2009
© NXP B.V. 2009. All rights reserved.
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