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HSCH-9201 Ver la hoja de datos (PDF) - Agilent Technologies, Inc

Número de pieza
componentes Descripción
Fabricante
HSCH-9201
Agilent
Agilent Technologies, Inc Agilent
HSCH-9201 Datasheet PDF : 4 Pages
1 2 3 4
Applications
This line of Schottky diodes is op-
timized for use in mixer applica-
tions at millimeter wave
frequencies. Some suggested
mixer types are single ended and
single balanced for the single and
series pair. The anti-parallel pair
is ideal for harmonic mixers.
Assembly Techniques
Diodes are ESD sensitive. ESD
preventive measures must be em-
ployed in all aspects of storage,
handling, and assembly.
Diode ESD precautions, handling
considerations, and bonding
methods are critical factors in
successful diode performance
and reliability.
Agilent application note #55,
"Beam Lead Diode Bonding and
Handling Procedures" provides
basic information on these sub-
jects.
Maximum Ratings
Power Dissipation at TLEAD = 25°C............................. 75 mW per junction
Measured in an infinite heat sink derated linearly
to zero at maximum rated temperature
Operating Temperature.....................................................-65°C to +150°C
Storage Temperature.........................................................-65°C to +150°C
Mounting Temperature ............................................235°C for 10 seconds
Minimum Lead Strength..................................................................6 grams
Electrical Specifications @ TA = 25°C
Symbol
Parameters and Test
Conditions
Cj[1]
Cj[1]
RS[2]
VF1
VF10
VF
VBR
Junction Capacitance
VR = 0 V, F = 1 MHz
Junction Capacitance
VR = 0 V, F = 1 MHz
Series Resistance
Forward Voltage
IF = 1 mA
Forward Voltage
IF = 10 mA
Forward Voltage
IF = 1 mA and 10 mA
Reverse Breakdown Voltage
VR = VBR measure IR ≤ 10 µA
(per junction)
HSCH-9101
Min. Typ. Max.
Part Number
HSCH-9201TC494
Min. Typ. Max.
HSCH-9251
Units
Min. Typ. Max.
0.040 0.050
0.040 0.050
0.040
pF
6
700 800
0.005 0.010
6
700 800
pF
6
W
700 800
mV
800 850
800 850
800 850
mV
15
15
mV
4.5
4.5
V
[1]. Junction capacitance is determined by measuring total device capacitance and subtracting the calculated parasitic
capacitance (0.035 pF).
[2]. Series resistance is determined by measuring the dynamic resistance and subtracting the calculated junction resistance of 6.
7-6
HSCH-9251/rev3.0

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