2STW1693 Ver la hoja de datos (PDF) - STMicroelectronics
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2STW1693 Datasheet PDF : 9 Pages
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2STW1693
High power PNP epitaxial planar bipolar transistor
Features
■ High breakdown voltage VCEO = -80 V
■ Complementary to 2STW4466
■ Typical ft = 20 MHz
■ Fully characterized at 125 oC
Applications
■ Audio power amplifier
Description
The device is a PNP transistor manufactured in
low voltage planar technology using base island
layout. The resulting transistor shows good gain
linearity coupled with low VCE(sat) behaviour.
Recommended for 40W to 70W high fidelity audio
frequency amplifier output stage.
3
2
1
TO-247
Figure 1. Internal schematic diagram
Table 1. Device summary
Order code
2STW1693
Marking
2STW1693
Package
TO-247
Packaging
Tube
October 2008
Rev 2
1/9
www.st.com
9
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