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BAV19W Ver la hoja de datos (PDF) - General Semiconductor

Número de pieza
componentes Descripción
Fabricante
BAV19W
GE
General Semiconductor GE
BAV19W Datasheet PDF : 4 Pages
1 2 3 4
BAV19W THRU BAV21W
Small Signal Diodes
SOD-123
.022 (0.55)
Cathode Mark
Top View
.067 (1.70)
.055 (1.40)
min. .010 (0.25)
FEATURES
Silicon Epitaxial Planar Diodes
For general purpose
These diodes are also available in other case styles
including: the DO-35 case with the type designations
BAV19 to BAV21, the MiniMELF case with the type
designations BAV100 to BAV103 and the SOT-23 case
with the type designation BAS19 - BAS21.
MECHANICAL DATA
Case: SOD-123 Plastic Case
Weight: approx. 0.01 g
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 °C ambient temperature unless otherwise specified
Symbol
Value
Unit
Reverse Voltage
BAV19W
BAV20W
BAV21W
Forward DC Current at Tamb = 25 °C
Rectified Current (Average)
Half Wave Rectification with Resist. Load
at Tamb = 25 °C and f 50 Hz
Repetitive Peak Forward Current
at f 50 Hz, Θ = 180 °, Tamb = 25 °C
VR
120
V
VR
200
V
VR
250
V
IF
250 1)
mA
I0
200 1)
mA
IFRM
625 1)
mA
Surge Forward Current at t < 1 s, Tj = 25 °C
IFSM
1
A
Power Dissipation at Tamb = 25 °C
Ptot
4101)
mW
Junction Temperature
Tj
1501)
°C
Storage Temperature Range
TS
–65 to +1501)
°C
1) Valid provided that electrodes are kept at ambient temperature (SOD-123)
4/98

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