BC808-16 Ver la hoja de datos (PDF) - General Semiconductor
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BC808-16 Datasheet PDF : 5 Pages
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BC807, BC808
Small Signal Transistors (PNP)
TO-236AB (SOT-23)
.122 (3.1)
.110 (2.8)
.016 (0.4)
Top View
3
1
2
.037(0.95) .037(0.95)
Pin Configuration
1 = Base 2 = Emitter
3 = Collector
Mounting Pad Layout
0.031 (0.8)
0.079 (2.0)
0.035 (0.9)
0.037 (0.95)
0.037 (0.95)
.016 (0.4) .016 (0.4)
.102 (2.6)
.094 (2.4)
Dimensions in inches and (millimeters)
Mechanical Data
Case: SOT-23 Plastic Package
Weight: approx. 0.008 grams
Marking
Codes:
BC807-16 = 5A BC808-16 = 5E
-25 = 5B
-25 = 5F
-40 = 5C
-40 = 5G
Packaging Codes/Options:
E8/10K per 13” reel (8mm tape), 30K/box
E9/3K per 7” reel (8mm tape), 30K/box
Features
• PNP Silicon Epitaxial Planar Transistors for
switching, AF driver and amplifier applications.
• Especially suited for automatic insertion in thick
and thin-film circuits.
• These transistors are subdivided into three groups
(-16, -25, and -40) according to their current gain.
• As complementary types, the NPN transistors
BC817 and BC818 are recomended.
Maximum Ratings and Thermal Characteristics (TA = 25°C unless otherwise noted)
Parameter
Symbol
Value
BC807
50
Collector-Emitter Voltage (Base shorted) BC808
–VCES
30
Collector-Emitter Voltage (Base open)
BC807
BC808
–VCEO
45
25
Emitter-Base Voltage
–VEBO
5
Collector Current
–IC
800
Peak Collector Current
–ICM
1000
Peak Base Current
–IBM
200
Peak Emitter Current
Power Dissipation at TSB = 50 ˚C
Thermal Resistance Junction to Ambient Air
Thermal Resistance Junction to Substrate Backside
IEM
Ptot
RθJA
RθSB
1000
310(1)
450(1)
320(1)
Junction Temperature
Tj
150
Storage Temperature Range
TS
–65 to +150
Note: (1) Device on fiberglass substrate, see layout on next page.
Unit
V
V
V
mA
mA
mA
mA
mW
°C/W
°C/W
°C
°C
3/20/01
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