MBR2535CT Ver la hoja de datos (PDF) - Fairchild Semiconductor
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MBR2535CT Datasheet PDF : 3 Pages
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Discrete POWER & Signal
Technologies
MBR2535CT - MBR2560CT
Features
• Low power loss, high efficiency.
• High surge capacity.
• For use in low voltage, high frequency
inverters, free wheeling, and polarity
protection applications.
• Metal silicon junction, majority carrier
conduction.
• High current capacity, low forward
voltage drop.
• Guard ring for over voltage protection.
TO-220AB
PIN 1
PIN 3
+
CASE
PIN 2
30 Ampere Schottky Barrier Rectifiers
0 .1 13 ( 2. 87 )
0 .1 03 ( 2. 62 )
0 .1 6( 4 .0 6)
0 .1 4( 3 .5 6)
0 .0 37 ( 0. 94 )
0 .0 27 ( 0. 68 )
Absolute Maximum Ratings* TA = 25°C unless otherwise noted
0 .4 12 ( 10 .5 )
MAX
0 .1 54 ( 3. 91 )
0 .1 48 ( 3. 74 )
0.27(6.86)
0.23(5.84)
0 .5 94 ( 15 .1 )
0 .5 87 ( 14 .9 )
0.185(4.70)
0.175(4.44)
0.055(1.40)
0.045(1.14)
12 3
0.56(14.22)
0.53(13.46)
0.11(2.79)
0.10(2.54)
0 .1 05 ( 2. 67 )
0 .0 95 ( 2. 41 )
0.025(0.64)
0.014(0.35)
Dimensions are in: inches (mm)
Symbol
Parameter
Value
Units
IO
if(repetitive)
if(surge)
PD
RθJA
RθJL
Tstg
TJ
Average Rectified Current
.375 " lead length @ TA = 130°C
Peak Repetitive Forward Current
(Rated VR , Square Wave, 20 KHz) @ TA = 130°C
Peak Forward Surge Current
8.3 ms single half-sine-wave
Superimposed on rated load (JEDEC method)
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Thermal Resistance, Junction to Lead
Storage Temperature Range
Operating Junction Temperature
30
30
150
2.0
16.6
60
1.5
-65 to +175
-65 to +150
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
A
A
A
W
mW/°C
°C/W
°C/W
°C
°C
Electrical Characteristics TA = 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Maximum RMS Voltage
DC Reverse Voltage (Rated VR)
Voltage Rate of Change (Rated VR)
Maximum Reverse Current
@ rated VR
TA = 25°C
TA = 125°C
Maximum Forward Voltage
IF = 15 A, TC = 25°C
IF = 15 A, TC = 125°C
IF = 30 A, TC = 25°C
IF = 30 A, TC = 125°C
Peak Repetitive Reverse Surge
Current
2.0 us Pulse Width, f = 1.0 KHz
2535CT
35
24
35
Device
2545CT
2550CT
45
50
31
35
45
50
10,000
2560CT
60
42
60
0.2
1.0
40
50
-
0.75
-
0.65
0.82
-
0.73
-
1.0
0.5
Units
V
V
V
V/uS
mA
mA
V
V
V
V
A
©1999 Fairchild Semiconductor Corporation
MBR2535CT - MBR2560CT, Rev. A
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