VS-26MT80 Ver la hoja de datos (PDF) - Vishay Semiconductors
Número de pieza
componentes Descripción
Fabricante
VS-26MT80 Datasheet PDF : 7 Pages
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VS-26MT.., VS-36MT.. Series
Vishay Semiconductors
55
50 26MT.. Series
45 TJ = 150 °C
40
35
30
120° (rect.)
25
20
15
10
5
0
0
5
10
20
Total Output Current (A)
55
50
45
1 K/W
40
35
2 K/W
30 3 K/W
25
20
4
5
K/W
K/W
15 7 K/W
10 10 K/W
5
0
25
0
25
50
75 100 125 150
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - Total Power Loss Characteristics
320
300
At any rated load condition and with
280
rated VRRM applied following surge.
Initial TJ = 150 °C
260
at 60 Hz 0.0083 s
240
at 50 Hz 0.0100 s
220
200
180
160
140
120
100 26MT.. Series
80
1
10
100
Number of Equal Amplitude Half Cycle
Current Pulses (N)
Fig. 4 - Maximum Non-Repetitive Surge Current
150
36MT.. Series
130
110
90
70
~
120° (rect.)
+
-
50
0
5 10 15 20 25 30 35 40
Total Output Current (A)
Fig. 6 - Current Ratings Characteristics
400
Maximum non-repetitive surge current
360
versus pulse train duration.
Initial TJ = 150 °C
320
No voltage reapplied
280
Rated VRRM reapplied
240
200
160
120
26MT.. Series
80
0.01
0.1
1
Pulse Drain Duration (s)
Fig. 5 - Maximum Non-Repetitive Surge Current
1000
36MT.. Series
100
Per junction
10
TJ = 25 °C
TJ = 150 °C
1
0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
Instantaneous Forward Voltage (V)
Fig. 7 - Forward Voltage Drop Characteristics
Revision: 22-Jan-14
3
Document Number: 93565
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