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MMBZ12VALDG Datasheet PDF : 15 Pages
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NXP Semiconductors
MMBZxVAL series
Double ESD protection diodes for transient overvoltage suppression
7. Characteristics
Table 10. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Per diode
VF
VRWM
forward voltage
reverse standoff
voltage
IF = 10 mA
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
IRM
reverse leakage current
MMBZ12VAL
MMBZ12VAL/DG
VRWM = 8.5 V
MMBZ15VAL
MMBZ15VAL/DG
VRWM = 12 V
MMBZ18VAL
MMBZ18VAL/DG
VRWM = 14.5 V
MMBZ20VAL
MMBZ20VAL/DG
VRWM = 17 V
MMBZ27VAL
MMBZ27VAL/DG
VRWM = 22 V
MMBZ33VAL
MMBZ33VAL/DG
VRWM = 26 V
VBR
breakdown voltage
IR = 1 mA
MMBZ12VAL
MMBZ12VAL/DG
MMBZ15VAL
MMBZ15VAL/DG
MMBZ18VAL
MMBZ18VAL/DG
MMBZ20VAL
MMBZ20VAL/DG
MMBZ27VAL
MMBZ27VAL/DG
MMBZ33VAL
MMBZ33VAL/DG
Min Typ Max Unit
-
-
0.9 V
-
-
8.5 V
-
-
12
V
-
-
14.5 V
-
-
17
V
-
-
22
V
-
-
26
V
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
-
0.1 5
nA
11.4 12
14.25 15
17.1 18
19
20
25.65 27
31.35 33
12.6 V
15.75 V
18.9 V
21
V
28.35 V
34.65 V
MMBZXVAL_SER_1
Product data sheet
Rev. 01 — 1 September 2008
© NXP B.V. 2008. All rights reserved.
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