STW34NB20 Ver la hoja de datos (PDF) - STMicroelectronics

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STW34NB20

N-CHANNEL 200V - 0.062 Ω - 34A TO-247 PowerMESH™ MOSFET

STMicroelectronics 

STW34NB20

Table 3. Absolute Maximum Ratings

Symbol

Parameter

VDS

Drain-source Voltage (VGS = 0)

VDGR

Drain- gate Voltage (RGS = 20 kΩ)

VGS

Gate-source Voltage

ID

Drain Current (cont.) at TC = 25 °C

ID

Drain Current (cont.) at TC = 100 °C

IDM (1)

Drain Current (pulsed)

Ptot

Total Dissipation at TC = 25 °C

Derating Factor

Tstg

Storage Temperature

Tj

Max. Operating Junction Temperature

Note: 1. Pulse width limited by safe operating area

Table 4. Thermal Data

Symbol

Parameter

Rthj-case Thermal Resistance Junction-case

Max

Rthj-amb Thermal Resistance Junction-ambient Max

Tl

Maximum Lead Temperature For Soldering Purpose

Table 5. Avalanche Characteristics

Symbol

Parameter

IAR

Avalanche Current, Repetitive or Not-Repetitive

(pulse width limited by Tj max, δ < 1%)

EAS

Single Pulse Avalanche Energy

(starting Tj = 25 °C; ID = IAR; VDD = 50 V)

Value

200

200

± 30

34

21

136

180

1.44

-65 to 150

150

Value

0.69

30

300

Max Value

34

650

Unit

V

V

V

A

A

A

W

W°/C

°C

°C

Unit

°C/W

°C/W

°C

Unit

A

mJ

2/10

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