P2804HVG Ver la hoja de datos (PDF) - Niko Semiconductor

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Fabricante

P2804HVG

Dual N-Channel Enhancement Mode Field Effect Transistor

Niko Semiconductor 

NIKO-SEM

Dual N-Channel Enhancement Mode

Field Effect Transistor

P2804HVG

SOP-8

Lead-Free

On-State Drain Current1

Drain-Source On-State

Resistance1

Forward Transconductance1

ID(ON)

RDS(ON)

gfs

VDS = 5V, VGS = 10V

VGS = 4.5V, ID = 6A

VGS = 10V, ID = 7A

VDS = 10V, ID = 5A

20

A

30 42

mΩ

21 28

24

S

DYNAMIC

Input Capacitance

Output Capacitance

Reverse Transfer Capacitance

Total Gate Charge2

Gate-Source Charge2

Gate-Drain Charge2

Turn-On Delay Time2

Rise Time2

Turn-Off Delay Time2

Fall Time2

Ciss

Coss

Crss

Qg

Qgs

Qgd

td(on)

tr

td(off)

tf

VGS = 0V, VDS = 10V, f = 1MHz

VDS = 0.5V(BR)DSS, VGS = 5V,

ID = 7A

VDS = 20V

ID ≅ 1A, VGS = 10V, RGEN = 6Ω

790

175

pF

65

16

2.5

nC

2.1

2.2 4.4

7.5 15

nS

11.8 21.3

11 20

SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS (TC = 25 °C)

Continuous Current

Pulsed Current3

Forward Voltage1

IS

ISM

VSD

IF = Is, VGS = 0V

1.3

A

2.6

1V

Reverse Recovery Time

trr

IF = 5A, dlF/dt = 100A / µS

15.5

nS

Reverse Recovery Charge

Qrr

7.9

1Pulse test : Pulse Width ≤ 300 µsec, Duty Cycle ≤ 2%.

2Independent of operating temperature.

3Pulse width limited by maximum junction temperature.

REMARK: THE PRODUCT MARKED WITH “P2804HVG”, DATE CODE or LOT #

Orders for parts with Lead-Free plating can be placed using the PXXXXXXG parts name.

2

AUG-19-2004

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