2N5460(2001) Ver la hoja de datos (PDF) - ON Semiconductor

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componentes Descripción

Fabricante

2N5460
(Rev.:2001)

JFET Amplifiers

ON Semiconductor 

ON Semiconductort

2 DRAIN

JFET Amplifiers

P–Channel — Depletion

MAXIMUM RATINGS

Rating

Drain–Gate Voltage

Reverse Gate–Source Voltage

Forward Gate Current

Total Device Dissipation @ TA = 25°C

Derate above 25°C

Junction Temperature Range

Storage Channel Temperature Range

3

GATE

1 SOURCE

Symbol

VDG

VGSR

IG(f)

PD

TJ

Tstg

Value

40

40

10

350

2.8

–65 to +135

–65 to +150

Unit

Vdc

Vdc

mAdc

mW

mW/°C

°C

°C

2N5460

2N5461

2N5462

1

2

3

CASE 29–11, STYLE 7

TO–92 (TO–226AA)

ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic

Symbol

Min

Typ

Max

Unit

OFF CHARACTERISTICS

Gate–Source Breakdown Voltage

(IG = 10 µAdc, VDS = 0)

V(BR)GSS

40

—

—

Vdc

2N5460, 2N5461, 2N5462

Gate Reverse Current

IGSS

(VGS = 20 Vdc, VDS = 0)

2N5460, 2N5461, 2N5462

—

—

5.0

nAdc

(VGS = 30 Vdc, VDS = 0)

(VGS = 20 Vdc, VDS = 0, TA = 100°C)

2N5460, 2N5461, 2N5462

—

—

1.0

µAdc

(VGS = 30 Vdc, VDS = 0, TA = 100°C)

Gate–Source Cutoff Voltage

(VDS = 15 Vdc, ID = 1.0 µAdc)

2N5460

2N5461

2N5462

VGS(off)

0.75

—

1.0

—

1.8

—

6.0

Vdc

7.5

9.0

Gate–Source Voltage

(VDS = 15 Vdc, ID = 0.1 mAdc)

(VDS = 15 Vdc, ID = 0.2 mAdc)

(VDS = 15 Vdc, ID = 0.4 mAdc)

2N5460

2N5461

2N5462

VGS

Vdc

0.5

—

4.0

0.8

—

4.5

1.5

—

6.0

© Semiconductor Components Industries, LLC, 2001

1

November, 2001 – Rev. 3

Publication Order Number:

2N5460/D

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