D1553 Ver la hoja de datos (PDF) - Inchange Semiconductor
Número de pieza
componentes Descripción
Fabricante
D1553 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2SD1553
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP. MAX UNIT
V(BR)EBO Emitter-base breakdown voltage
IE=200mA , IC=0
5
V
VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A
5.0
8.0
V
VBEsat Base-emitter saturation voltage
ICBO
Collector cut-off current
IC=2A; IB=0.6A
VCB=500V; IE=0
1.5
V
10
μA
hFE
DC current gain
IC=0.5A ; VCE=5V
8
fT
Transition frequency
IC=0.1A ; VCE=10V
3
MHz
COB
Collector output capacitance
固IN电C半H导AN体GE SEMICONDUCTOR VF
Diode forward voltage
tf
Fall time
IE=0 ; VCB=10V;f=1MHz
IF=2.5A
ICP=2A ;IB1(end)=0.6A
95
pF
1.6
2.0
V
0.5
1.0
μs
2
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