KBJ601G Ver la hoja de datos (PDF) - Vishay Semiconductors

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componentes Descripción

Fabricante

KBJ601G

6.0A Glass Passivated Bridge Rectifier

Vishay Semiconductors 

KBJ6005G–KBJ610G

Vishay Lite–On Power Semiconductor

Characteristics (Tj = 25_C unless otherwise specified)

6 with heatsink

1000

5

4

Tj = 25°C

f = 1 MHz

3

without heatsink

2

1

Resistive or inductive load

0

0 25 50 75 100 125 150

15640

Tamb – Ambient Temperature ( °C )

Figure 1. Max. Average Forward Current vs.

Ambient Temperature

10

100

15643

10

0.1

1.0

10

100

VR – Reverse Voltage ( V )

Figure 4. Typ. Diode Capacitance vs. Reverse Voltage

1000

1.0

Tj = 150°C

Tj = 25°C

0.1

0.01

0

15641

IF Pulse Width = 300 µs

0.4 0.8 1.2 1.6 1.8

VF – Forward Voltage ( V )

Figure 2. Typ. Forward Current vs. Forward Voltage

180

Tj = 150°C

160

Single Half Sine–Wave

(JEDEC Method)

120

Tj = 150°C

100

Tj = 125°C

Tj = 100°C

10

1.0

Tj = 25°C

0.1

0 20 40 60 80 100 120 140

15644

Percent of Rated Peak Reverse Voltage (%)

Figure 5. Typ. Reverse Current vs. Percent of

Rated Peak Reverse Voltage

80

40

0

1

15642

10

100

Number of Cycles at 60 Hz

Figure 3. Max. Peak Forward Surge Current vs.

Number of Cycles

2 (4)

Rev. A2, 24-Jun-98

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