2SC5820 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics

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Fabricante

2SC5820

Silicon NPN Epitaxial High Frequency Low Noise Amplifier / Oscillator

Hitachi -> Renesas Electronics 

2SC5820

S11 Parameter vs. Frequency

.8 1

.6

1.5

2

.4

3

4

.2

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-.2

-5

-4

-3

-.4

-2

-.6

-.8 -1

-1.5

Condition: VCE = 2 V, ZO = 50 Ω

100 to 3000 MHz (100 MHz Step)

( IC = 30 mA)

S21 Parameter vs. Frequency

90°

Scale: 8 / div.

120°

60°

150°

30°

180°

0°

-150°

-30°

-120°

-60°

-90°

Condition: VCE = 2 V, ZO = 50 Ω

100 to 3000 MHz (100 MHz Step)

( IC = 30 mA)

S12 Parameter vs. Frequency

90° Scale: 0.06 / div.

120°

60°

150°

30°

180°

0°

-150°

-30°

-120°

-60°

-90°

Condition: VCE = 2 V, ZO = 50 Ω

100 to 3000 MHz (100 MHz Step)

( IC = 30 mA)

S22 Parameter vs. Frequency

.8 1

.6

1.5

2

.4

3

4

.2

5

10

0

.2 .4 .6 .8 1 1.5 2 3 4 5 10

-10

-.2

-5

-4

-3

-.4

-2

-.6

-.8 -1

-1.5

Condition: VCE = 2 V, ZO = 50 Ω

100 to 3000 MHz (100 MHz Step)

( IC = 30 mA)

Rev.1, Nov. 2002, page 6 of 12

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