FQA18N50V2 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FQA18N50V2 Datasheet PDF : 8 Pages
| |||
Typical Characteristics
Top :
VGS
15.0 V
10.0 V
8.0 V
101
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
100
10-1
10-1
※ Notes :
1. 250μ s Pulse Test
2. TC = 25℃
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
0
VGS = 10V
VGS = 20V
※ Note : TJ = 25℃
10
20
30
40
50
60
70
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
7000
6000
5000
4000
3000
2000
1000
0
10-1
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
Coss
Ciss
Crss
※ Notes :
1. VGS = 0 V
2. f = 1 MHz
100
101
V , Drain-Source Voltage [V]
DS
Figure 5. Capacitance Characteristics
©2002 Fairchild Semiconductor Corporation
101
150℃
100
10-1
2
25℃
-55℃
※ Notes :
1. VDS = 40V
2. 250μ s Pulse Test
4
6
8
10
VGS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
101
100
10-1
0.2
150℃ 25℃
※ Notes :
1. VGS = 0V
2. 250μ s Pulse Test
0.4
0.6
0.8
1.0
1.2
1.4
1.6
V , Source-Drain Voltage [V]
SD
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
VDS = 100V
10
VDS = 250V
VDS = 400V
8
6
4
2
※ Note : ID = 18A
0
0
5
10
15
20
25
30
35
40
45
Q , Total Gate Charge [nC]
G
Figure 6. Gate Charge Characteristics
Rev. B, August 2002
Share Link: 