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SSH8N80A Datasheet PDF : 8 Pages
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SSH8N80A
N-CHANNEL POWER MOSFET
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise specified)
Symbol
BVDSS
∆BV/∆TJ
VGS(th)
IGSS
Characteristics
Drain-Source Breakdown Voltage
Breakdown Voltage Temp. Coeff.
Gate Threshold Voltage
Gate-Source Leakage, Forward
Gate-Source Leakage, Reverse
IDSS Drain-to-Source Leakage Current
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
Qg
Qgs
Qgd
Static Drain-Source
On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain (Miller) Charge
Min.
800
−
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
Typ.
−
0.96
−
−
−
−
−
−
6.56
2020
195
82
25
37
113
42
93
14.3
42.1
Max.
−
−
3.5
100
−100
25
250
Units
Test Conditions
V
V/°C
V
nA
µA
VGS=0V, ID=250µA
ID=250µA, See Fig 7
VDS=5V, ID=250µA
VGS=30V
VGS= −30V
VDS=800V
VDS=640V, TC=125°C
1.5
Ω VGS=10V, ID=4A
{
−
2600
230
95
60
85
235
95
120
−
−
S VDS=50V, ID=4A
{
VGS=0V, VDS=25V
pF f=1MHz
See Fig 5
VDD=400V, ID=9A
ns RG=10Ω
See Fig 13
{|
VDS=640V, VGS=10V
nC ID=9A
See Fig 6 & Fig 12 { |
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
trr
Qrr
Characteristics
Continuous Source Current
Pulsed-Source Current
x
Diode Forward Voltage
{
Reverse Recovery Time
Reverse Recovery Charge
Min.
−
−
−
−
−
Typ.
−
−
−
560
8.4
Max.
8
32
1.4
−
−
Units
Test Conditions
Integral reverse pn-diode
A
in the MOSFET
V TJ=25°C, IS=8A, VGS=0V
ns TJ=25°C, IF=9A
µC diF/dt=100A/µs
{
Notes:
x Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature
y L=13mH, IAS=8A, VDD=50V, RG=27Ω, Starting TJ =25°C
z ISD ≤ 9A, di/dt ≤ 180A/µs, VDD ≤ BVDSS, Starting TJ =25°C
{ Pulse Test: Pulse Width ≤ 250µs, Duty Cycle ≤ 2%
| Essentially Independent of Operating Temperature
2
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