B649 Ver la hoja de datos (PDF) - Hitachi -> Renesas Electronics
Número de pieza
componentes Descripción
Fabricante
B649 Datasheet PDF : 8 Pages
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DC Current Transfer Ratio
vs. Collector Current
350
VCE = –5V
350
Ta = 75°C
250
25°C
200
150
–25°C
100
50
0
–1
–10
–100 –1,000
Collector current IC (mA)
2SB649, 2SB649A
Collector to Emitter Saturation
Voltage vs. Collector Current
–1.2
IC = 10 IB
–1.0
–0.8
–0.6
–0.4
–0.2
–0
–1
–25
25
–10
–100
Collector current IC (mA)
–1,000
Base to Emitter Saturation Voltage
vs. Collector Current
–1.2
IC = 10 IB
–1.0
–0.8
Ta = –25°C
25
–0.6
75
–0.4
–0.2
–0
–1
–10
–100
Collector current IC (mA)
–1,000
Gain Bandwidth Product
vs. Collector Current
240
VCE = –5 V
200
160
120
80
40
0
–10
–30
–100 –300 –1,000
Collector current IC (mA)
5
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