PSS9013H Ver la hoja de datos (PDF) - Philips Electronics
Número de pieza
componentes Descripción
Fabricante
PSS9013H Datasheet PDF : 9 Pages
| |||
Philips Semiconductors
20 V NPN general purpose transistors
Product specification
PSS9013 series
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
VALUE
Rth j-a
thermal resistance from junction to ambient in free air; note 1
175
Note
1. Device mounted on a FR4 printed-circuit board, single-sided copper, tinplated and standard footprint.
UNIT
K/W
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
ICBO
collector-base cut-off current
IEBO
hFE
hFE
VCEsat
VBEsat
VBEon
Cc
emitter-base cut-off current
DC current gain
DC current gain
PSS9013G
PSS9013H
collector-emitter saturation
voltage
base-emitter saturation
voltage
base-emitter turn on voltage
collector capacitance
CONDITIONS
VCB = 35 V; IE = 0
VCB = 35 V; IE = 0; Tj = 150 °C
VEB = 5 V; IC = 0
VCE = 1 V; IC = 500 mA
VCE = 1 V; IC = 50 mA
IC = 100 mA; IB = 10 mA
IC = 500 mA; IB = 50 mA
IC = 500 mA; IB = 50 mA
MIN.
−
−
−
40
112
144
−
−
−
VCE = 1 V; IC = 100mA
−
VCB = 6 V; IE = Ie = 0; f = 1 MHz −
TYP.
−
−
−
−
−
−
60
250
1
760
5
MAX.
100
50
100
−
UNIT
nA
µA
nA
166
202
250
mV
600
mV
1.2
V
1000 mV
−
pF
2004 Aug 10
3
Share Link: 