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N25Q128A23EF7H0E

128Mb, 3V, Multiple I/O Serial Flash Memory 3V, Multiple I/O, 4KB Sector Erase

Micron Technology 

128Mb, 3V, Multiple I/O Serial Flash Memory

AC Characteristics and Operating Conditions

Table 38: AC Characteristics and Operating Conditions (Continued)

Parameter

PAGE PROGRAM cycle time (256 bytes)

Symbol

tPP

Min

–

Typ1

0.5

Max

5

Unit

ms

Notes

7

PAGE PROGRAM cycle time (n bytes)

–

int(n/8) ×

5

ms

7

0.0158

PAGE PROGRAM cycle time, VPP = VPPH (256

bytes)

–

0.4

5

ms

7

PROGRAM OTP cycle time (64 bytes)

Subsector ERASE cycle time

Sector ERASE cycle time

–

0.2

–

ms

7

tSSE

–

0.25

0.8

s

tSE

–

0.7

3

s

Sector ERASE cycle time (with VPP = VPPH)

Bulk ERASE cycle time

–

0.6

3

s

tBE

–

170

250

s

Bulk ERASE cycle time (with VPP = VPPH)

–

160

250

s

Notes:

1. Typical values given for TA = 25 °C.

2. tCH + tCL must add up to 1/fC.

3. Value guaranteed by characterization; not 100% tested.

4. Expressed as a slew-rate.

5. Only applicable as a constraint for a WRITE STATUS REGISTER command when STATUS

REGISTER WRITE is set to 1.

6. VPPH should be kept at a valid level until the PROGRAM or ERASE operation has comple-

ted and its result (success or failure) is known.

7. When using the PAGE PROGRAM command to program consecutive bytes, optimized

timings are obtained with one sequence including all the bytes versus several sequences

of only a few bytes (1 < n < 256).

8. int(A) corresponds to the upper integer part of A. For example int(12/8) = 2, int(32/8) = 4

int(15.3) =16.

PDF: 09005aef845665fe

n25q_128mb_3v_65nm.pdf - Rev. P 06/13 EN

71

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