NGD8201N Ver la hoja de datos (PDF) - ON Semiconductor
Número de pieza
componentes Descripción
Fabricante
NGD8201N Datasheet PDF : 8 Pages
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NGD8201N, NGD8201AN
ELECTRICAL CHARACTERISTICS
Characteristic
Symbol
ON CHARACTERISTICS (Note 4)
Collector−to−Emitter On−Voltage VCE(on)
Forward Transconductance
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Transfer Capacitance
gfs
CISS
COSS
CRSS
Test Conditions
IC = 6.5 A, VGE = 3.7 V −
NGD8201N
IC = 6.5 A, VGE = 3.7 V −
NGD8201AN
IC = 9.0 A, VGE = 3.9 V −
NGD8201N
IC = 9.0 A, VGE = 3.9 V −
NGD8201AN
IC = 7.5 A, VGE = 4.5 V
IC = 10 A, VGE = 4.5 V
IC = 15 A, VGE = 4.5 V
IC = 20 A, VGE = 4.5 V −
NGD8201N
IC = 20 A, VGE = 4.5 V −
NGD8201AN
IC = 6.0 A, VCE = 5.0 V
f = 10 kHz, VCE = 25 V
Temperature Min Typ Max Unit
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
TJ = 175°C
TJ = −40°C
TJ = 25°C
0.95 1.15 1.35
V
0.7 0.95 1.15
1.0 1.3 1.4
0.85 1.03 1.35
0.7 0.9 1.15
0.9 1.11 1.4
0.95 1.25 1.45
0.8 1.05 1.25
1.1 1.4 1.5
0.9 1.11 1.45
0.8 1.01 1.25
1.0 1.18 1.5
0.85 1.15 1.4
0.7 0.95 1.2
1.0 1.3 1.6*
1.0 1.3 1.6
0.8 1.05 1.4
1.1 1.4 1.7*
1.15 1.45 1.7
1.0 1.3 1.55
1.25 1.55 1.8*
1.3 1.6 1.9
1.2 1.5 1.8
1.4 1.75 2.0
1.1 1.4 1.9
1.2 1.5 1.8
1.3 1.42 2.0
10
18
25 Mhos
1100 1300 1500 pF
TJ = 25°C
70
80
90
18
20
22
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