MX29F800CB Ver la hoja de datos (PDF) - Integrated Device Technology

Número de pieza

componentes Descripción

Fabricante

MX29F800CB

8M-BIT [1024K x 8 / 512K x 16] SINGLE VOLTAGE 5V ONLY FLASH MEMORY

Integrated Device Technology 

MX29F800C T/B

ERASE AND PROGRAMMING PERFORMANCE

Parameter

Byte Programming Time

Word Programming Time

Sector Erase Time

Chip Erase Time

Chip Programming Time

Erase/Program Cycles

Min.

Byte Mode

Word Mode

100,000

Note: 1. Typical condition means 25°C, 5V.

2. Maximum condition means 85°C, 4.5V, 100K cycles.

Limits

Typ.

9

11

0.7

8

10

7.5

Max.

300

360

8

32

27

17

Units

us

us

sec

sec

sec

sec

Cycles

LATCH-UP CHARACTERISTICS

Input Voltage voltage difference with GND on A9, Reset# pins

Input Voltage voltage difference with GND on all normal pins inputs

Input current pulse

Includes all pins except Vcc. Test conditions: Vcc = 5V, one pin per testing

Min.

-1.0V

-1.0V

-100mA

Max.

12.5V

Vcc + 1.0V

+100mA

PIN CAPACITANCE

Parameter Symbol Parameter Description

CIN2

Control Pin Capacitance

COUT

Output Capacitance

CIN

Input Capacitance

Test Set

VIN=0

VOUT=0

VIN=0

Typ.

Max.

Unit

12

pF

12

pF

8

pF

P/N:PM1493

REV. 1.2, JUL. 05, 2012

41

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