VNQ5027AKTR-E Ver la hoja de datos (PDF) - STMicroelectronics

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VNQ5027AKTR-E

Quad channel high side driver with analog current sense for automotive applications

STMicroelectronics 

VNQ5027AK-E

Electrical specifications

2.3

Electrical characteristics

Values specified in this section are for 8 V<VCC<36 V, -40 °C< Tj <150 °C, unless otherwise

stated.

Table 6.

Symbol

Power section

Parameter

Test conditions

Min. Typ. Max.

VCC Operating supply voltage

VUSD Undervoltage shutdown

VUSDhyst

Undervoltage shut-down

hysteresis

4.5 13 36

3.5 4.5

0.5

RON On-state resistance

Vclamp Clamp voltage

IS Supply current

IOUT= 3A; Tj= 25°C

27

IOUT= 3A; Tj= 150°C

54

IOUT= 3A; VCC=5V; Tj= 25°C

37

IS= 20 mA

41 46 52

Off-state; VCC=13V; Tj=25°C;

VIN=VOUT=VSENSE=VCSD=0V

2(1) 5( 1)

On-state; VCC=13V; VIN=5V;

IOUT=0A

8

14

IL(off)

Off-state output current(2)

VIN=VOUT=0V; VCC=13V;

Tj=25°C

VIN=VOUT=0V; VCC=13V;

Tj=125°C

0 0.01 3

0

5

VF

Output - VCC diode

voltage(2)

-IOUT=3A; Tj=150°C

0.7

1. PowerMOS leakage included.

2. For each channel.

Unit

V

V

V

mΩ

mΩ

mΩ

V

µA

mA

µA

V

Table 7. Switching (VCC=13V; Tj= 25°C)

Symbol

Parameter

Test conditions

Min. Typ.

Max. Unit

td(on)

td(off)

Turn-on delay time

Turn-off delay time

RL= 4.3Ω (see Figure 6.)

RL= 4.3Ω (see Figure 6.)

(dVOUT/dt)on Turn-on voltage slope

RL= 4.3Ω

(dVOUT/dt)off Turn-off voltage slope

RL= 4.3Ω

WON

WOFF

Switching energy

losses during twon

Switching energy

losses during twoff

RL= 4.3Ω (see Figure 6.)

RL= 4.3Ω (see Figure 6.)

40

40

See

Figure 19.

See

Figure 21.

0.2

0.3

µs

µs

V/µs

V/µs

mJ

mJ

Doc ID 12730 Rev 7

9/31

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