FDP65N06 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDP65N06 Datasheet PDF : 8 Pages
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Typical Performance Characteristics
Figure 1. On-Region Characteristics
300
100
V
GS
Top : 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
Bottom : 5.5 V
10
* Notes :
1. 250µs Pulse Test
2. T = 25oC
2
C
0.1
1
10
V , Drain-Source Voltage [V]
DS
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
Figure 2. Transfer Characteristics
500
100
150oC
25oC
10
1
2
-55oC
* Notes :
1. V = 40V
DS
2. 250µs P ulse T est
4
6
8
10
V , G ate-S ource V oltage [V ]
GS
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperatue
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
100
V = 10V
GS
V = 20V
GS
* Note : T = 25oC
J
5
10
15
20
I , Drain Current [A]
D
10
1500C
250C
* Note :
1. V =0V
GS
2. 250µs Pulse Test
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
V , Source-Drain Violtage [V]
DS
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
4000
3000
2000
C
oss
C
iss
C = C + C (C = shorted)
iss
gs
gd ds
C =C +C
oss
ds
gd
C =C
rss
gd
* Note :
1. V = 0 V
GS
2. f = 1 MHz
1000
C
rss
0
10-1
100
101
V , Drain-Source Voltage [V]
DS
12
10
8
6
4
2
0
0
V = 12V
DS
V = 30V
DS
V = 48V
DS
* Note : I = 65A
D
10
20
30
40
Q , Total Gate Charge [nC]
G
FDP65N06 Rev. A1
3
www.fairchildsemi.com
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