IRF1018EPBF Ver la hoja de datos (PDF) - International Rectifier
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IRF1018EPBF Datasheet PDF : 11 Pages
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IRF1018E/S/SLPbF
Static @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
V(BR)DSS
Drain-to-Source Breakdown Voltage
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
Gate Threshold Voltage
IDSS
Drain-to-Source Leakage Current
IGSS
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
60 ––– ––– V VGS = 0V, ID = 250μA
––– 0.073 ––– V/°C Reference to 25°C, ID = 5mAc
––– 7.1 8.4 mΩ VGS = 10V, ID = 47A f
2.0 ––– 4.0 V VDS = VGS, ID = 100μA
––– ––– 20 μA VDS = 60V, VGS = 0V
––– ––– 250
VDS = 48V, VGS = 0V, TJ = 125°C
––– ––– 100 nA VGS = 20V
––– ––– -100
VGS = -20V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
Parameter
Min. Typ. Max. Units
Conditions
gfs
Forward Transconductance
110 ––– –––
Qg
Qgs
Qgd
Qsync
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Total Gate Charge Sync. (Qg - Qgd)
––– 46 69
––– 10 –––
––– 12 –––
––– 34 –––
RG(int)
Internal Gate Resistance
––– 0.73 –––
td(on)
Turn-On Delay Time
––– 13 –––
tr
Rise Time
––– 35 –––
td(off)
Turn-Off Delay Time
––– 55 –––
tf
Fall Time
––– 46 –––
Ciss
Input Capacitance
––– 2290 –––
Coss
Output Capacitance
––– 270 –––
Crss
Reverse Transfer Capacitance
––– 130 –––
Coss eff. (ER) Effective Output Capacitance (Energy Related)h ––– 390 –––
Coss eff. (TR) Effective Output Capacitance (Time Related)g ––– 630 –––
S VDS = 50V, ID = 47A
nC ID = 47A
VDS = 30V
VGS = 10V f
ID = 47A, VDS =0V, VGS = 10V
Ω
ns VDD = 39V
ID = 47A
RG = 10Ω
VGS = 10V f
VGS = 0V
VDS = 50V
pF ƒ = 1.0MHz
VGS = 0V, VDS = 0V to 60V h
VGS = 0V, VDS = 0V to 60V g
Diode Characteristics
Symbol
Parameter
IS
Continuous Source Current
(Body Diode)
ISM
Pulsed Source Current
(Body Diode) c
VSD
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
IRRM
Reverse Recovery Current
ton
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
––– ––– 79 A MOSFET symbol
D
showing the
––– ––– 315
integral reverse
G
p-n junction diode.
S
––– ––– 1.3 V TJ = 25°C, IS = 47A, VGS = 0V f
––– 26 39 ns TJ = 25°C
VR = 51V,
––– 31 47
TJ = 125°C
––– 24 36 nC TJ = 25°C
IF = 47A
di/dt = 100A/μs f
––– 35 53
TJ = 125°C
––– 1.8 ––– A TJ = 25°C
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by max. junction
temperature.
Limited by TJmax, starting TJ = 25°C, L = 0.08mH
RG = 25Ω, IAS = 47A, VGS =10V. Part not recommended for
use above this value.
ISD ≤ 47A, di/dt ≤ 1668A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
Pulse width ≤ 400μs; duty cycle ≤ 2%.
Coss eff. (TR) is a fixed capacitance that gives the same charging time
as Coss while VDS is rising from 0 to 80% VDSS.
Coss eff. (ER) is a fixed capacitance that gives the same energy as
Coss while VDS is rising from 0 to 80% VDSS.
When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
mended footprint and soldering techniques refer to application note #AN-994.
Rθ is measured at TJ approximately 90°C.
This is only applied to TO-220
2
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