SST39VF040-55-4I-NHE Ver la hoja de datos (PDF) - Microchip Technology
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SST39VF040-55-4I-NHE Datasheet PDF : 28 Pages
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1 Mbit / 2 Mbit / 4 Mbit Multi-Purpose Flash
SST39LF010 / SST39LF020 / SST39LF040
SST39VF010 / SST39VF020 / SST39VF040
AC Characteristics
Data Sheet
Table 12: Read Cycle Timing Parameters - VDD = 3.0-3.6V for SST39LF010/020/040 and
2.7-3.6V for SST39VF010/020/040
SST39LF010-55
SST39LF020-55
SST39LF040-55
SST39VF010-70
SST39VF020-70
SST39VF040-70
Symbol Parameter
Min
Max
Min
Max
Units
TRC
Read Cycle Time
55
70
ns
TCE
Chip Enable Access Time
55
70
ns
TAA
Address Access Time
55
70
ns
TOE
Output Enable Access Time
30
35
ns
TCLZ1
CE# Low to Active Output
0
TOLZ1
OE# Low to Active Output
0
0
ns
0
ns
TCHZ1
CE# High to High-Z Output
15
25
ns
TOHZ1
TOH1
OE# High to High-Z Output
Output Hold from Address Change
15
25
ns
0
0
ns
T12.2 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
Table 13: Program/Erase Cycle Timing Parameters
Symbol
Parameter
Min
Max
Units
TBP
Byte-Program Time
20
µs
TAS
Address Setup Time
TAH
Address Hold Time
TCS
WE# and CE# Setup Time
0
ns
30
ns
0
ns
TCH
TOES
TOEH
WE# and CE# Hold Time
OE# High Setup Time
OE# High Hold Time
0
ns
0
ns
10
ns
TCP
TWP
TWPH1
TCPH1
TDS
TDH1
TIDA1
TSE
TSCE
CE# Pulse Width
WE# Pulse Width
WE# Pulse Width High
CE# Pulse Width High
Data Setup Time
Data Hold Time
Software ID Access and Exit Time
Sector-Erase
Chip-Erase
40
ns
40
ns
30
ns
30
ns
40
ns
0
ns
150
ns
25
ms
100
ms
T13.1 25023
1. This parameter is measured only for initial qualification and after a design or process change that could affect this
parameter.
©2012 Silicon Storage Technology, Inc.
13
DS25023B
06/13
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