2N06L65 Ver la hoja de datos (PDF) - Infineon Technologies

Número de pieza

componentes Descripción

Fabricante

2N06L65

OptiMOS® Power-Transistor

Infineon Technologies 

OptiMOS® Power-Transistor

Features

• Dual N-channel Logic Level - Enhancement mode

• AEC Q101 qualified

• MSL1 up to 260°C peak reflow

• 175°C operating temperature

• Green Product (RoHS compliant)

• 100% Avalanche tested

IPG20N06S2L-65

Product Summary

V DS

R

3)

DS(on),max

ID

55 V

65 mΩ

20 A

PG-TDSON-8-4

Type

IPG20N06S2L-65

Package

Marking

PG-TDSON-8-4 2N06L65

Maximum ratings, at T j=25 °C, unless otherwise specified

Parameter

Symbol

Conditions

Continuous drain current

one channel active1)

ID

T C=25 °C, V GS=10 V

T C=100 °C, V GS=10 V

Pulsed drain current1)

one channel active

Avalanche energy, single pulse1, 3)

Avalanche current, single pulse3)

Gate source voltage

I D,pulse -

E AS

I AS

V GS

I D=10A

-

-

Power dissipation

one channel active

P tot

T C=25 °C

Operating and storage temperature T j, T stg -

IEC climatic category; DIN IEC 68-1 -

-

Rev. 1.0

page 1

Value

Unit

20

A

14

80

40

mJ

15

A

±20

V

43

W

-55 ... +175

°C

55/175/56

2009-09-07

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