NTD20N06L(2011) Ver la hoja de datos (PDF) - ON Semiconductor

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NTD20N06L
(Rev.:2011)

Power MOSFET 20 Amps, 60 Volts Logic Level, N−Channel DPAK

ON Semiconductor 

NTD20N06L, NTDV20N06L

40

VGS = 10 V

8V

30

20

5V

6V

4.5 V

4V

3.5 V

10

3V

0

0

1

2

3

4

5

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 1. On−Region Characteristics

40

VDS ≥ 10 V

30

20

10

TJ = 25°C

TJ = 100°C

0

1.6

2.4

TJ = −55°C

3.2

4

4.8

5.6

VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)

Figure 2. Transfer Characteristics

0.085

0.075

VGS = 5 V

0.065

TJ = 100°C

0.055

0.045

TJ = 25°C

0.035

0.025

TJ = −55°C

0.015

0

10

20

30

ID, DRAIN CURRENT (AMPS)

Figure 3. On−Resistance versus

Gate−to−Source Voltage

0.085

0.075

VGS = 10 V

0.065

0.055

0.045

0.035

TJ = 100°C

TJ = 25°C

0.025

TJ = −55°C

0.015

40

0

10

20

30

40

ID, DRAIN CURRENT (AMPS)

Figure 4. On−Resistance versus Drain Current

and Gate Voltage

2

ID = 10 A

1.8

VGS = 5 V

1.6

1.4

10000

VGS = 0 V

1000

TJ = 150°C

1.2

100

1

0.8

TJ = 100°C

0.6

−50 −25 0 25 50 75 100 125 150 175

TJ, JUNCTION TEMPERATURE (°C)

Figure 5. On−Resistance Variation with

Temperature

10

0

10

20

30

40

50

60

VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)

Figure 6. Drain−to−Source Leakage Current

versus Voltage

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