DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

BGU7032,598 Ver la hoja de datos (PDF) - NXP Semiconductors.

Número de pieza
componentes Descripción
Fabricante
BGU7032,598
NXP
NXP Semiconductors. NXP
BGU7032,598 Datasheet PDF : 11 Pages
1 2 3 4 5 6 7 8 9 10
NXP Semiconductors
BGU7032
1 GHz wideband low-noise amplifier with bypass
Table 7. Characteristics …continued
Tamb = 25 °C; typical values at VCC = 5 V; ZS = ZL = 75 Ω; Rbias = 43 Ω; 40 MHz f1 1000 MHz.
Symbol Parameter
Conditions
Min Typ Max Unit
RLout output return loss
Gp = 10 dB mode
bypass mode
[1] -
12 -
dB
[1] -
8-
dB
PL(1dB) output power at 1 dB gain
compression
1 GHz; Gp = 10 dB
mode
[1] -
14 -
dBm
IP3O
output third-order intercept point Gp = 10 dB mode
bypass mode
[1][2] -
[1][2] -
29 -
29 -
dBm
dBm
[1] Mode depends on setting of Vctrl(Gp) (VCTRL); see Table 8.
[2] The fundamental frequency (f1) is 1000 MHz. The intermodulation product (IM3) is 2 × f2 f1, where
f2 = f1 ± 1 MHz. Input power Pi = 10 dBm.
Table 8. Gain selection (pin CTRL)
10 °C Tamb +70 °C; recommended power-up condition: VCTRL = logic 0 or < 0.7 V.
Vctrl(Gp) (VCTRL) (V)
0.7
Mode
bypass
4.3
Gp = 10 dB
Remark: Vctrl(Gp) must not exceed VCC; ICTRL must be limited to a maximum of 5 mA.
BGU7032
Product data sheet
All information provided in this document is subject to legal disclaimers.
Rev. 2 — 14 September 2010
© NXP B.V. 2010. All rights reserved.
4 of 11

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]