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Número de pieza
componentes Descripción
IGW15N120H3 Ver la hoja de datos (PDF) - Infineon Technologies
Número de pieza
componentes Descripción
Fabricante
IGW15N120H3
1200V high speed switching series third generation
Infineon Technologies
IGW15N120H3 Datasheet PDF : 14 Pages
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IGW15N120H3
Highspeedswitchingseriesthirdgeneration
v
GE
(t)
90%
V
GE
I
C
(t)
v
CE
(t)
90%
I
C
10%
I
C
10%
V
GE
t
90%
I
C
10%
I
C
t
I,V
dI
F
/dt
ab
a
b
dI
Figure C.
Definition of diode switching
characteristics
t
t
d(off)
t
f
t
d(on)
t
r
t
Figure A.
v
GE
(t)
90%
V
GE
10%
V
GE
t
I
C
(t)
2%
I
C
t
v
CE
(t)
E
off
=
t
1
t
1
Figure B.
t
2
V
CE
x
I
C
x d
t
t
2
E
on
=
t
3
t
3
t
4
V
CE
x
I
C
x d
t
2%
V
CE
t
4
t
Figure D.
CC
Figure E.
Dynamic test circuit
Parasitic inductance L
s
,
parasitic capacitor L
s
,
relief capacitor C
r
,
(only for ZVT switching)
13
Rev.2.1,2014-12-01
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