FDB9406_F085 Ver la hoja de datos (PDF) - Fairchild Semiconductor
Número de pieza
componentes Descripción
Fabricante
FDB9406_F085 Datasheet PDF : 6 Pages
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Typical Characteristics
20
ID = 80A
16
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
12
TJ = 25oC
8
TJ = 175oC
4
0
2
4
6
8
10
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 11. Rdson vs Gate Voltage
1.2
VGS = VDS
ID = 250μA
1.0
0.8
0.6
0.4
0.2
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
1.8
PULSE DURATION = 80μs
DUTY CYCLE = 0.5% MAX
1.6
1.4
1.2
1.0
0.8
0.6
-80
ID = 80A
VGS = 10V
-40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE(oC)
Figure 12. Normalized Rdson vs Junction
Temperature
1.2
ID = 1mA
1.1
1.0
0.9
0.8
-80 -40 0 40 80 120 160 200
TJ, JUNCTION TEMPERATURE (oC)
Figure 13. Normalized Gate Threshold Voltage vs
Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs Junction Temperature
10000
1000
100
Ciss
Coss
f = 1MHz
VGS = 0V
Crss
10
0.1
1
10
100
VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 15. Capacitance vs Drain to Source
Voltage
10
ID = 80A
8
6
VDD = 16V
VDD = 20V
VDD = 24V
4
2
0
0
20 40 60 80 100 120
Qg, GATE CHARGE(nC)
Figure 16. Gate Charge vs Gate to Source
Voltage
FDB9406_F085 Rev. C1
5
www.fairchildsemi.com
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