FQN1N60C Ver la hoja de datos (PDF) - Fairchild Semiconductor
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FQN1N60C Datasheet PDF : 9 Pages
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FQN1N60C
N-Channel QFET® MOSFET
600 V, 0.30 A, 11.5 Ω
Description
This N-Channel enhancement mode power MOSFET is produced
using Fairchild Semiconductor’s proprietary planar stripe and
DMOS technology. This advanced MOSFET technology has
been especially tailored to reduce on-state resistance, and to
provide superior switching performance and high avalanche
energy strength. These devices are suitable for switched mode
power supplies, active power factor correction (PFC), and
electronic lamp ballasts.
December 2013
Features
• 0.30 A, 600 V, RDS(on) = 11.5 Ω (Max.) @ VGS = 10 V, ID = 0.15 A
• Low Gate Charge (Typ. 4.8 nC)
• Low Crss (Typ. 3.5 pF)
• 100% Avalanche Tested
D
GDS
TO-92
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
Drain-Source Voltage
Drain Current
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
- Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
PD
Power Dissipation (TA = 25°C)
Power Dissipation (TL = 25°C)
- Derate above 25°C
TJ, TSTG
TL
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering,
1/8" from Case for 5 Seconds.
Thermal Characteristics
(Note 1)
(Note 2)
(Note 1)
(Note 1)
(Note 3)
Symbol
RθJL
RθJA
Parameter
Thermal Resistance, Junction-to-Lead, Max.
Thermal Resistance, Junction-to-Ambient, Max.
(Note 5a)
(Note 5b)
FQN1N60CTA
600
0.3
0.18
1.2
± 30
33
0.3
0.3
4.5
1
3
0.02
-55 to +150
300
FQN1N60CTA
50
140
©2005 Fairchild Semiconductor Corporation
1
FQN1N60C Rev C1
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
oC/W
www.fairchildsemi.com
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