IRF5NJ5305 Ver la hoja de datos (PDF) - International Rectifier

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IRF5NJ5305

HEXFET® POWER MOSFET SURFACE MOUNT (SMD-0.5)

International Rectifier 

IRF5NJ5305

2500

2000

1500

 VGS = 0V, f = 1MHz

Ciss = Cgs + Cgd , Cds SHORTED

Crss = Cgd

Coss = Cds + Cgd

 Ciss

1000

C oss

500

C rss

0

1

10

100

-VDS , Drain-to-Source Voltage (V)

Fig 5. Typical Capacitance Vs.

Drain-to-Source Voltage

20  ID = -16A

16

12

 VDS =-44V

VDS =-28V

VDS =-11V

8

4

 FOR TEST CIRCUIT

SEE FIGURE 13

0

0

20

40

60

80

QG , Total Gate Charge (nC)

Fig 6. Typical Gate Charge Vs.

Gate-to-Source Voltage

100

 TJ = 150° C

10

1000

100

OPERATION IN THIS AREA

LIMITED BY R DS(on)

 TJ = 25° C

1

0.1

0.2

 VGS = 0 V

0.6

1.0

1.4

1.8

-VSD ,Source-to-Drain Voltage (V)

Fig 7. Typical Source-Drain Diode

Forward Voltage

4

10

Tc = 25°C

Tj = 150°C

Single Pulse

1

1

10

1ms

10ms

100

-VDS , Drain-toSource Voltage (V)

Fig 8. Maximum Safe Operating Area

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